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Roy Lab

Publications

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Journals

28. M. M. Islam, M. S. Rahman, H. Heldmeyer, S. S. Han, Y. Jung, T. Roy+, “Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array,”NPJ 2D Materials and Applications, vol. 8, pp. 21, 2024.

27. A. Krishnaprasad, D. Dev, M. S. Shawkat, R. M. Martinez, M. M. Islam, H.-S. Chung, T.-S. Bae, Y. Jung, T. Roy+, “Graphene/MoS2/SiOx memristive synapses for linear weight update,” NPJ 2D Materials and Applications, vol. 7, pp. 22, 2023.

26. C. Yoo, T-J Ko, M. G. Kaium, R. M. Martinez$, M. M. Islam$, H. Li, J. H. Kim, J. Cao, M. Acharya, T. Roy+, Y. Jung+, “A minireview on 2D materials-enabled optoelectronic artificial synaptic devices,” APL Materials, vol. 10, pp. 070702, 2022.

25. M. M. Islam, A. Krishnaprasad, D. Dev, R. M. Martinez, V. Okonkwo, B. Wu, S. S. Han, T.-S. Bae, H.-S. Chung, J. Touma, Y. Jung, T. Roy, “Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition,” ACS Nano, vol. 16, pp. 10188-98, 2022.

24. R. M. Martinez, M. M. Islam, A. Krishnaprasad, T. Roy+, “Graphene-oxide interfaces for optoelectronic synapse application,” Scientific Reports, vol. 12, 2022.

23. A. Krishnaprasad$, D. Dev$, S. S. Han, Y. Shen, H.-S. Chung, T.-A. Bae, C. Yoo, Y. Jung, M. Lanza and T. Roy+, “MoS2 Synapses with Ultra-low Variability and Their Implementation in Boolean Logic,” ACS Nano, vol. 16, pp. 2866-2876, 2022.

22. J. Park, P. Kravchuk, A. Krishnaprasad, T. Roy, E. H. Kang+, “Graphene Enhances Actin Filament Assembly Kinetics and Modulates NIH-3T3 Fibroblast Cell Spreading,” Int. J. Mol. Sci., vol. 23, pp. 509, 2022.

21. L. H. Reddy, S. R. Pande, T. Roy, E. M. Vogel, A. Chakravorty, B. Chakrabarti, “A SPICE compact model for forming-free, low-power graphene-insulator-graphene ReRAM technology,” Emergent Mater., vol. 4, pp. 1055–1065, 2021.

20. J. P. Ganesan, D. Dev, A. Krishnaprasad, C. Feit, D. Moser, R. K. Kanjolia, T. Roy, P. Banerjee+, “Semiconductor-to-metal transition in atomic layer deposition (ALD) of VO2 films using VCl4 and water,” Appl. Phys. Lett., vol. 118, pp. 261902, 2021.

19. M. S. Shawkat, S. B. Hafiz, M. M. Islam, S. A. Mofid, M. M. Al Mahfuz, A. Biswas, H.-S. Chung, E. Okogbue, T.-J Ko, D. Chanda, T. Roy+, D.-K. Yo+, Y. Jung+, “Scalable van der Waals 2D PtTe2 Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection,” ACS Appl. Mat. Interfaces, vol. 13, pp. 15542–15550, 2021.

18. J. Li, P. Dwivedi, K. S. Kumar, T. Roy, K. E. Crawford+, and J. Thomas+, “Growing Perovskite Quantum Dots on Carbon Nanotubes for Neuromorphic Optoelectronic Computing,” Advanced Electronic Materials, vol. 7, pp. 2000535, 2021.

17. M. M. Islam, D. Dev, A. Krishnaprasad, L. Tetard and T. Roy+, “Optoelectronic synapse using monolayer MoS2 field effect transistors,” Nature Scientific Reports, vol. 10, 2020.

16. T.-J. Ko, H. Li, S. A. Mofid, C. Yoo, E. Okogbue, S. S. Han, M. S. Shawkat, A. Krishnaprasad, M. M. Islam, D. Dev, Y. Shin, K. H. Oh, G.-H. Lee, T. Roy, Y. Jung+, “Two Dimensional Near Atom Thickness Materials for Emerging Neuromorphic Devices and Applications,” Iscience, vol. 23, pp. 101676, 2020.

15. D. Dev, M. S. Shawkat, A. Krishnaprasad, Y. Jung and T. Roy, “Artificial Nociceptor using 2D MoS2 Threshold Switching Memristors,” IEEE Electron Device Letters, vol. 41, pp. 1440-43, 2020.

14. D. Dev, A. Krishnaprasad, M. S. Shawkat, Z. He, S. Das, D. Fan, H.-S. Chung, Y. Jung and T. Roy, “2D MoS2 based Threshold Switching Memristor for Artificial Neuron,” IEEE Electron Device Letters, vol. 41, pp. 936-939, 2020.

13. B. Pradhan*, S. Das*, J. Li, F. Chowdhury, J. Cherusseri, D. Pandey, D. Dev, A. Krishnaprasad, E. Barrios, A. Towers, A. Gesquiere, L. Tetard, T. Roy, and J. Thomas, “Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice,” Science Advances, vol. 6, no. 7, 2020.

12. A. Krishnaprasad, N. Choudhary, S. Das, D. Dev, H. Kalita, H.-S. Chung, O. Aina, Y. Jung, and T. Roy, “Electronic synapses with near-linear weight update using MoS2/graphene memristors,” Applied Physics Letters, vol. 115, no. 10, pp. 1031041-4, 2019.

11. M. S. Shawkat, H.-S. Chung, D. Dev, S. Das, T. Roy and Y. Jung, “Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe2 Layers on Silicon,” ACS Applied Materials and Interfaces, vol. 11, no. 30, pp. 27251-58, 2019.

10. J. Cherusseri, K. S. Kumar, N. Choudhary, N. Nagaiah, Y. Jung, T. Roy, and J. Thomas,”Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors,” Nanotechnology, vol. 30, no. 20, 2019. (Invited Review)

9. H. Kalita, A. Krishnaprasad, N. Choudhary, S. Das, D. Dev, Y. Ding, L. Tetard, H.-S. Chung, Y. Jung and T. Roy, “Artificial Neuron using Vertical MoS2/Graphene Threshold Switching Memristors,” Scientific Reports, vol. 9, no. 53, 2019.

8. S. Das, M. J. Hossain, S.-F. Leung, A. Lenox, Y. Jung, K. Davis, J.-H. He, T. Roy, “A Leaf-inspired Photon Management Scheme Using Optically Tuned Bilayer Nanoparticles for Ultra-thin and Highly Efficient Photovoltaic Devices,” Nano Energy, in press.

7. P. Wang, H. Kalita, A. Krishnaprasad, D. Dev, A. O’Hara, R. Jiang, E.X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, T. Roy,”Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics,” IEEE Trans. Nucl. Sci., in press.

6. S. S. Withanage, H. Kalita, H.-S. Chung, T. Roy, Y. Jung, S. I. Khondaker, “Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation,” ACS Omega, vol. 3, pp. 18943-18949, 2018.

5. S. Das, D. Pandey, J. Thomas and T. Roy, “The Role of Graphene and Other 2D Materials in Solar Photovoltaics” Adv. Mat., vol. 31, 2019. (Invited Review)(Cover)

4. E. Okogbue, J. H. Kim, T.-J. Ko, H.-S. Chung, A. Krishnaprasad, J. C. Flores, S. Nehate, M. G. Kaium, J. B. Park, S.-J. Lee, K. B. Sundaram, L.Zhai, T. Roy, Y. Jung, “Centimeter-Scale Periodically Corrugated Few-Layer 2D MoS2 with Tensile Stretch-Driven Tunable Multifunctionalities,” ACS Appl. Mat. Interfaces, vol. 10, pp. 30623-30630, 2018. (Cover)

3. H. Kalita, A. Krishnaprasad, N. Choudhary, S. Das, H.-S. Chung, Y. Jung, and T. Roy, “Artificial Neuron using MoS2/Graphene Threshold Switching Memristors,” in 76th IEEE Device Research Conference, Santa Barbara, CA, June 2018.

2. D. Dev, A. Krishnaprasad, H. Kalita, S. Das, V. Rodriguez, J.C. Flores, L. Zhai and T. Roy, “High quality gate dielectric/MoS2 interfaces probed by the conductance method “, Appl. Phys. Lett., vol 112, pp. 232101, 2018.

1. M. A. Islam, J. H. Kim, A. Schropp, H. Kalita, N. Choudhary, D. Weitzman, S. I. Khondaker, K. H. Oh, T. Roy, H-S. Chung, and Y. Jung, “Centimeter-scale 2D van der Waals vertical heterostructures integrated on deformable substrates enabled by gold sacrificial layer-assisted growth,” Nano Letters, vol. 17, pp. 6157-65, 2017.

Conference Presentations by students

  1. Md. Sazzadur Rahman et al., “A Circuit-design Friendly Light Intensity-dependent Conductance Tuning Approach using Floating Gate Optoelectronic Synapse with 2D Materials,” 82nd Device Research Conference, University of Maryland, College Park, June 2024.
  2. J. Chen et al., “BEOL-Compatible Capacitive Synapse Array with HighYield and Multilevel Characteristics,” 82nd Device Research Conference, University of Maryland, College Park, June 2024.
  3. X. Zhuang et al., “Energy-Efficient Interfacial Analog Graphene/Insulator/Graphene Memristor and Crossbar Array,” 82nd Device Research Conference, University of Maryland, College Park, June 2024.
  4. A. Sarkar et al., “Existence of recoverable and non-recoverable PBTI in ITO transistors,” 82nd Device Research Conference, University of Maryland, College Park, June 2024.
  5. Md. Sazzadur Rahman et al., “A Noise-robust Optoelectronic Synaptic Array with 2D Materials,” 81st Device Research Conference, UC Santa Barbara, June 2023.
  6. M. M. Islam et al., “Infrared-sensitive optoelectronic synapses with 2D materials,” 80th Device Research Conference, Ohio State University, June 2022.
  7. R. M. Martinez et al., “Memcapacitive optoelectronic synapses with MoS2/Al2O3/PtTe2 transistors,” 80th Device Research Conference, Ohio State University, June 2022.
  8. A. Krishnaprasad et al., “Implementation of Boolean logic using ultra-low variability MoS2 synapses and MoS2 LIF neurons,” 4th IBM IEEE CAS/EDS – AI Compute Symposium, October 2021.
  9. Krishnaprasad et al., Ultra-low cycle-to-cycle variability in Au/MoS2/Ti/Au memristive synapses for neuromorphic computing,” 4th IBM IEEE CAS/EDS – AI Compute Symposium, October 2021.
  10. A. Krishnaprasad et al., “Ultra-low cycle-to-cycle variability in Au/MoS2/Ti/Au memristive synapses for neuromorphic computing,” 79th Device Research Conference, June 2021.
  11. M. M. Islam et al., “Broadband optoelectronic synapse using p-Si/PtTe2/Al2O3/MoS2,” 79th Device Research Conference, June 2021.
  12. R. M. Martinez et al., Graphene/Ta2O5/Graphene optoelectronic synapses,” 79th Device Research Conference, June 2021.
  13. M. M. Islam et al., “Optoelectronic Synapse Using Monolayer MoS2 Field Effect Transistors for Neuromorphic Applications,” 78th Device Research Conference, June 2020.
  14. D. Dev et al., “Artificial Nociceptor Using Two-terminal 2D MoS2 Threshold Switch,” 78th Device Research Conference, June 2020.
  15. A. Krishnaprasad et al., “Engineering Linear and Symmetric Synaptic Weight Update in Graphene/MoS2 cross-point devices,” 78th Device Research Conference, June 2020.
  16. M. M. Islam et al., “Photo induced synaptic behaviors emulated in monolayer MoS2devices for realizing artificial cogni-retina,” 2020 MRS Fall/Spring Meeting, November 2020.
  17. A. Krishnaprasad et al., “MoS2-based Electronic Synapses for Unsupervised Learning,” 2020 MRS Fall/Spring Meeting, November 2020.
  18. D. Dev et al., “MoS2-based LIF Neurons for Spiking Neural Networks,” 2020 MRS Fall/Spring Meeting, November 2020.
  19. A. Krishnaprasad, D. Dev and T. Roy, “MoS2-based LIF Neurons and Synapses for Unsupervised Learning,” 2nd IBM AI Compute Symposium, IBM T.J. Watson Research Center THINKLab, Yorktown Heights, New York, October 2019.
  20. D. Dev, A. Krishnaprasad, Z. Ze, S. Das, M.S. Shawkat, M. Manley, O. Aina, D. Fan, Y. Jung, and T. Roy+, “Artificial neuron using Ag/2D-MoS2/Au threshold switching memristors,” 77th Device Research Conference, Ann Arbor, MI, June 2019.
  21. A. Krishnaprasad, S. Das, N. Choudhary, D. Dev. H.-S. Chung, O. Aina, Y. Jung, and T. Roy, “Linear weight update in MoS­2/Graphene memristive synapses for unsupervised learning,” 77th Device Research Conference, Ann Arbor, MI, June 2019.
  22. A. Krishnaprasad, N. Choudhary, S. Das, D. Dev, H. Kalita, H.-S. Chung, Y. Jung, and T. Roy, “Emulating Biological Synaptic Behavior for Ultra-Low Power Neuromorphic Applications Using MoS2/Graphene Heterojunctions,” MRS Spring Meeting, Phoenix, AZ, 2019.
  23. D. Dev, A. Krishnaprasad, T. Roy, “Near-Ideal 2D/2D and 2D/High-Κ Dielectric Interfaces Extracted Using the Conductance Method,” MRS Spring Meeting, Phoenix, AZ, 2019.
  24. J. Thompson, T. Roy, M. Ishigami, “STM Investigation of Graphene/Few-Layer Molybdenum Disulfide Memristor Devices,” MRS Spring Meeting, Phoenix, AZ, 2019.
  25. S. Das, M. J. Hossain, K. Davis and T. Roy, “All dielectric light trapping scheme for enhancing the efficiency of ultrathin flexible Gr/Si solar cell, MRS Fall Meeting, Boston MA, 2018.
  26. P. Wang, H. Kalita, A. Krishnaprasad, D. Dev, A. OHara, R. Jiang, E. Zhang, D. Fleetwood, R. Schrimpf, S. Pantelides and T. Roy, “Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics” 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Gothenburg, Sweden, 2018.
  27. H. Kalita, A.Krishnaprasad, N. Choudhary, S. Das, D. Dev, H.S Chung, Y. Jung and T.Roy, “Artificial Neurons using MoS2/Graphene memristors” Device Research Conference, 76th Annual, IEEE, Santa Barabara, CA, 2018.
  28. A. O’Hara, A. Krishnaprasad, H. Kalita, T. Roy, and S. Pantelides, “Origins of interface traps in MoS 2-based field-effect transistors,” APS March Meeting 2018.
  29. A. Krishnaprasad, and T. Roy, “Trap densities at gate dielectric/2D channel interface by capacitance measurements,” 231st ECS Meeting, New Orleans, LA, May 2017.

PRE-2017:

  1. M. Tosun, L. Chan, M. Amani, T. Roy, G.-H. Ahn, P. Taheri, C. Carraro, J. W. Ager, R. Maboudian, and A. Javey, “Air stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment,” ACS Nano, vol. 10, pp. 6853-60, 2016.

  2. T. Roy et al., “2D-2D Tunnel FETs with WSe2/SnSe2 van der Waals heterojunctions,” Appl. Phys. Lett., vol. 108, pp. 0831111-5, 2016. (APL Editor’s Pick, APL Top 20 Most Read Articles 2016)

  3. P. Zhao, S. B. Desai, M. Tosun, T. Roy, H. Fang, A. B. Sachid, and A. Javey, “2D Layered Materials: From Materials Properties to Device Applications,” Intl. Electron Dev. Meeting (IEDM), 2015 (Invited)

  4. T. Roy, “Van der Waals heterojunctions for energy-efficient electronics”, Army Research Laboratory, Adelphi, MD, Nov 2015 (Invited).

  5. T. Roy, M. Tosun, X. Cao, H. Fang, D. Lien, P. Zhao, Y. Chen, Y. Chueh, J. Guo, and A. Javey, “Dual-gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors,” MRS Spring Meeting, San Francisco, CA, April 2015.

  6. T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. Desai, M. Hettick, C. C. Hu, and A. Javey, “Field-Effect Transistors Built from All Two-Dimensional Material Components,” MRS Spring Meeting, San Francisco, CA, April 2015.

  7. T. Roy, M. Tosun, X. Cao, H. Fang, D. Lien, P. Zhao, Y. Chen, Y. Chueh, J. Guo, and A. Javey, “Dual-gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors,” ACS Nano, vol. 9, pp. 2071-9, 2015.

  8. D.-H. Lien, J. S. Kang, M. Amani, K. Chen, M. Tosun, H.-P. Wang, T. Roy, M. S. Eggleston, M. C. Wu, M. Dubey, S.-C. Lee, J.-H. He, A. Javey, “Engineering Light Outcoupling in 2D Materials”, Nano Letters, vol. 15, pp. 1356-61, 2015.

  9. T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. Desai, M. Hettick, C. C. Hu, and A. Javey, “Field-Effect Transistors Built from All Two-Dimensional Material Components,” ACS Nano, vol. 8, pp. 6259–6264, 2014. (ACS Nano Top 20 most read articles of 2014; LBL news; C&EN news; IEEE Spectrum; ACS Nano Editor’s Choice)

  10. T. Roy, L. Liu, S. de la Barrera, B. Chakrabarti, Z. R.Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel, “Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions,”Appl. Phys. Lett., vol. 104, pp. 1235061-4, 2014.

  11. C. A. Joiner, T. Roy, Z. R. Hesabi, B. Chakrabarti, E. M. Vogel, “Cleaning graphene with a titanium sacrificial layer,” Appl. Phys. Lett., vol. 104, pp. 2231091-3, 2014.

  12. B. Chakrabarti, T. Roy, and E. M. Vogel, “Nonlinear switching with ultralow reset power in Graphene-Insulator-Graphene forming-free Resistive Memories,” IEEE Electron Dev. Lett., vol. 35, pp. 750-752, 2014.

  13. T. Roy, Z. R. Hesabi, B. Chakrabarti, C. A. Joiner and E. M. Vogel, “Resonant tunneling in CVD Graphene-Insulator-Graphene devices with atomic layer deposited high-k tunnel dielectrics,” IEEE Semicond. Interface Specialists Conf., Washington D. C., 2013.

  14. B. Chakrabarti, T. Roy, C. A. Joiner, Z. R. Hesabi and E. M. Vogel, “Forming-free resistive switching with low current operation in graphene-insulator-graphene structures,” 71st Annual Dev. Res. Conf., South Bend, IN, 2013.

  15. B. Chakrabarti, T. Roy, N. A. Ellis, C. A. Joiner, Z. R. Hesabi and E. M. Vogel, “Resistance switching in graphene-insulator-graphene structures”, TECHCON, Austin, TX, 2013.

  16. T. Roy, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel, “Integration and characterization of graphene-insulator-graphene junctions,” Invited talk, 223rd ECS Meeting, Toronto, Canada, 2013.

  17. T. Roy, Z. Razavi Hesabi, C. A. Joiner, A. Fujimoto and E. M. Vogel, “Barrier Engineering for Double Layer CVD Graphene Tunnel FETs,” 18th Conf. of Insulating Films on Semiconductors (INFOS), Krakow, Poland, Jun 2013.

  18. T. Roy, Z. Razavi Hesabi, C. A. Joiner and E. M. Vogel, “Atomic layer deposited high-k dielectrics in double layer graphene vertical tunnel FETs,” MRS Spring Meeting, San Francisco CA, Apr. 2013.

  19. A. Fujimoto, T. Roy, C. Huan, Z. R. Hesabi, C. A. Joiner, W. Yu, Y. Jiang, Z. Jiang, and E. M. Vogel, “Electrical properties and Hall effect for graphene Tunnel Field Effect Transistors,” The Phys. Soc. of Japan, 2013.

  20. Z. R. Hesabi, C. A. Joiner, T. Roy, and E. M. Vogel, “Direct transfer of Graphene devices on arbitrary substrates,” AVS 60th Intl. Symposium and Exhibition, 2013.

  21. T. Roy, Z. R. Hesabi, C. A. Joiner, A. Fujimoto and E. M. Vogel, “Barrier Engineering for Double Layer CVD Graphene Tunnel FETs,” Microelectron. Eng., vol. 109, pp. 117-119, 2013.

  22. B. Chakrabarti, T. Roy, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel, “Forming-free resistive switching with low current operation in graphene-insulator-graphene structures,” IEEE 71st Ann. Dev. Res. Conf., South Bend, IN, 2013.

  23. T. Roy, Z. R. Hesabi, C. A. Joiner, and E. M. Vogel, “Integration and characterization of Graphene-Insulator-Graphene junctions,” ECS Trans., vol. 53, pp. 63-69, 2013.

  24. C. X. Zhang, X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S-H. Ryu, and S. T. Pantelides, “Temperature dependence and postirradiation annealing response of the 1/f Noise of 4H-SiC MOSFETs,” IEEE Trans. Electron Dev., vol. 60, pp. 2361-2367, 2013.

  25. D. M. Fleetwood, T. Roy, X. Shen, Y. S. Puzyrev, E. X. Zhang, R. D. Schrimpf, and S. T. Pantelides, “Oxygen-related border traps in MOS and GaN devices,” IEEE 11th Intl. Conf. on Solid-state and Integrated Circuit Tech., Xian, China, 2012.

  26. D. M. Fleetwood, T. Roy, X. Shen, Y. S. Puzyrev, E. X. Zhang, R. D. Schrimpf, and S. T. Pantelides, “Oxygen-related border traps in MOS and GaN devices,” IEEE 11th Intl. Conf. on Solid-state and Integrated Circuit Tech., Xian, China, 2012.

  27. S. T. Pantelides, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf, “Reliability of III-V devices – the defects that cause the trouble”,Invited paper, Microelectron. Eng., vol. 90, pp. 3-8, Feb. 2012.

  28. K. Warnick, Y. S. Puzyrev, T. Roy, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Room temperature diffusive phenomena in semiconductors: The case of AlGaN”, Phys. Rev. B, vol. 84, pp. 214109-5, 2011.

  29. Y. S. Puzyrev, T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors”, IEEE Nuclear Science and Space Radiation Effects Conference, Las Vegas, NV, July 2011.

  30. T. Roy, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Reliability-limiting defects in AlGaN/GaN HEMTs”, IEEE International Reliability Physics Symposium, Monterey, CA, 10-14th April 2011.

  31. T. Roy, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Defect energy distribution in GaN/AlGaN heterostructures grown in Ga-rich and ammonia-rich conditions”, APS March Meeting, Dallas, TX, 2011.

  32. Y. S. Puzyrev, T. Roy, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides, “Atomic displacements in proton-irradiated AlGaN/GaN heterostructures”,APS March Meeting, Dallas, TX, 2011.

  33. Y. S. Puzyrev, T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors”, IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 2918-2924, 2011.

  34. T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors”, Appl. Phys. Lett., vol. 99, no. 20, pp. 2030501-3, 2011.

  35. T. Roy, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides, “Reliability-limiting defects in AlGaN/GaN HEMTs”, IEEE International Reliability Physics Symposium, Monterey, CA, 10-14th April 2011.

  36. T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “1/f noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions”, Microelectron. Reliab., vol. 51, no. 2, pp. 212-216, 2011.

  37. Y. S. Puzyrev, T. Roy, M. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects in GaN and hot-electron degradation in high-electron-mobility transistors”, J. Appl. Phys., vol. 109, no. 3, pp. 0345011-8, 2011.

  38. T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides, “Process dependence of proton-induced degradation in GaN HEMTs”, IEEE Trans. Nucl, Sci., vol. 57, no. 6, pp. 3060-3065, 2010.

  39. S. T. Pantelides, X. Shen, Y. Puzyrev, B. R. Tuttle, T. Roy, S. Dasgupta, D. M. Fleetwood, and R.D. Schrimpf, “Reliability of III-V devices – the defects that cause the trouble”, Invited talk, 4th International Conference on Micro-Nanoelectronics, Nanotechnology and MEMS, Athens, Greece, December 2010.

  40. T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides, “Process dependence of proton-induced degradation in GaN HEMTs”, IEEE Nuclear Science and Space Radiation Effects Conference, Denver, CO, July 2010.

  41. T. Roy, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, and R. D. Schrimpf, “1/f noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions,” 2010 IEEE Reliability of Compound Semiconductors Workshop, Portland, OR, May 17, 2010.

  42. T. Roy, Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantelides, “Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions”, Appl. Phys. Lett., vol. 96, no. 13, pp. 133503-5, 2010.

  43. T. Roy, A. F. Witulski, R. D. Schrimpf, M. L. Alles and L. W. Massengill, “Single event mechanisms in 90 nm triple-well CMOS devices”, IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2948-56, 2008.

  44. T. Roy, A. F. Witulski, R. D. Schrimpf, M. L. Alles, B. L. Bhuva, S. DasGupta and L. W. Massengill, “Single event mechanisms in 90 nm triple-well CMOS devices”, IEEE Nuclear Science and Space Radiation Effects Conference, Tucson, AR, July 2008.

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